1. Product Scientific Research and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms organized in a tetrahedral lattice, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing extraordinary atomic bond toughness.
The Si– C bond, with a bond power of approximately 318 kJ/mol, is amongst the best in architectural ceramics, providing exceptional thermal security, solidity, and resistance to chemical assault.
This durable covalent network causes a material with a melting factor surpassing 2700 ° C(sublimes), making it among one of the most refractory non-oxide porcelains readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC preserves mechanical stamina and creep resistance at temperatures above 1400 ° C, where numerous metals and standard porcelains start to soften or weaken.
Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) makes it possible for rapid thermal biking without disastrous cracking, an important characteristic for crucible efficiency.
These inherent homes stem from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise a highly stable and largely packed crystal structure.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are typically made from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in sturdiness and thermal shock resistance.
Sintered SiC crucibles are created via solid-state or liquid-phase sintering at temperature levels above 2000 ° C, frequently with boron or carbon ingredients to boost densification and grain limit communication.
This process produces a completely dense, fine-grained structure with very little porosity (
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